Bibliothèque de L'IMIST/CNRST

Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.

Doping Limits and Bandgap Engineering in Wide Gap IIVI Compounds -- Epitaxial Growth of II-VI Compounds by MOVPE -- Ohmic Contacts to II-VI and III-V Compound Semiconductors -- Dry Etching of SiC -- Processing of Silicon Carbide for Devices and Circuits -- Plasma Etching of III-V Nitrides -- Ion Implantation in Wide Bandgap Semiconductors -- Rare Earth Impurities in Wide Gap Semiconductors -- SIMS Analysis of Wide Bandgap Semiconductors -- Hydrogen in Wide Bandgap Semiconductors -- Diamond Deposition and Characterization -- Index.

Includes bibliographical references and index.

Description based on print version record.