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The K P method : electronic properties of semiconductors par Voon,, Lok C. Lew Yan. Publication : [S.l.] Springer 2009 . 445 p. , This book presents a detailed exposition of the formalism and application of k.p theory for both bulk and nanostructured semiconductors. For bulk crystals, this is the first time all the major techniques for deriving the most popular Hamiltonians have been provided in one place. For nanostructures, this is the first time the Burt-Foreman theory has been made accessible. Thus, the reader will gain a clear understanding of the k.p method, will have an explicit listing of the various Hamiltonians in a consistent notation for their use, and a set of representative results. In addition, the reader can derive an excellent understanding of the electronic structure of semiconductors. 24 cm. Date : 2009 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

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Transport equations for semiconductors par JUngel, Ansga Publication : [S.l.] Springer 2009 . 332 p. , Semiconductor devices are ubiquitous in the modern computer and telecommunications industry. A precise knowledge of the transport equations for electron flow in semiconductors when a voltage is applied is therefore of paramount importance for further technological breakthroughs. In the present work, the author tackles their derivation in a systematic and rigorous way, depending on certain key parameters such as the number of free electrons in the device, the mean free path of the carriers, the device dimensions and the ambient temperature. Accordingly a hierarchy of models is examined which is reflected in the structure of the book: first the microscopic and macroscopic semi-classical approaches followed by their quantum-mechanical counterparts. 25 cm. Date : 2009 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

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