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˜The œphysics of semiconductors : an introduction including devices and nanophysics / par Grundmann, Marius. Publication : Berlin ; | New York : Springer, 2006 . xxx, 689 p. : , "With 587 figures, 6 in color, and 36 tables"--T.p. 24 cm. Date : 2006 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Basic semiconductor physics par Hamaguchi, Chihiro. Publication : [S.l.] Springer 2010 . 585 p. , This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mobility. Recent progress in quantum structures such as two-dimensional electron gas, superlattices, quantum Hall effect, electron confinement and the Landauer formula are included. The Quantum Hall effect is presented with different models. In the second edition, the addition energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. Also the physics of semiconductor Lasers is described in detail including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue Lasers, optical confinement, laser modes, strained quantum wells lasers which will give insight into the physics of various kinds of semiconductor lasers, in addition to the various processes of luminescence. 24 cm. Date : 2010 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Electro-optical effects to visualize field and current distributions in semiconductors par Böer,, K. W. Publication : Heidelberg Springer 2010 . viii, 125 pages 24 cm. Date : 2010 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Electron transport phenomena in semiconductors / par Askerov,, B. M. Publication : Singapore ; | River Edge, NJ : World Scientific, 1994 . xiv, 394 p. : , Translation of: çElektronnye ëiÞavlenëiÞa perenosa v poluprovodnikakh. 23 cm. Date : 1994 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Electronic and optoelectronic properties of semiconductor structures par Singh,, Jasprit. Publication : [S.l.] Cambridge University Press 2007 . 560 p. , Jasprit Singh presents the underlying physics behind devices that drive today's technologies, utilizing carefully chosen solved examples to convey important concepts. Real-world applications are highlighted throughout the book, stressing the links between physical principles and actual devices. The volume provides engineering and physics students and professionals with complete coverage of key modern semiconductor concepts. A solutions manual and set of viewgraphs for use in lectures is available for instructors, from solutions@cambridge.org. 24 cm. Date : 2007 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Electronic quantum transport in mesoscopic semiconductor structures / par Ihn, Thomas. Publication : New York : Springer, 2004 . xi, 270 p. : 25 cm. Date : 2004 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1), La bibliothèque des Sciences Exactes et Naturelles (1),

Electrons and phonons in semiconductor multilayers par Ridley, B. K. Publication : Cambridge, UK | New York Cambridge University Press 2009 . xii, 409 pages 26 cm. Date : 2009 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Excitons in low-dimensional semiconductors : theory, numerical methods, applications / par Glutsch,, Stephan, Publication : Berlin ; | New York : Springer, 2004 . xi, 294 p. : 24 cm. Date : 2004 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Heteroepitaxy of semiconductors theory, growth, and characterization par Ayers, John E. Publication : [S.l.] CRC Press 2007 . 480 p. , Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field. 24 cm. Date : 2007 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Physics of semiconductor devices par Sze , Simon M. Publication : [S.l.] Wiley-Interscience 2007 . 832 p. , The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial departmen 24 cm. Date : 2007 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Quantum theory of the optical and electronic properties of semiconductors par Haug, Hartmut. Publication : [S.l.] World Scientific Publishing Company 2009 . 484 p. , This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics. This fifth edition includes an additional chapter on Quantum Optical Effects where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the semiconductor luminescence equations and the expression for the stationary luminescence spectrum, results are presented to show the importance of Coulombic effects on the semiconductor luminescence and to elucidate the role of excitonic populations. Contents: Oscillator Model; Atoms in a Classical Light Field; Periodic Lattice of Atoms; Mesoscopic Semiconductor Structures; Free Carrier Transitions; Ideal Quantum Gases; Interacting Electron Gas; Plasmons and Plasma Screening; Retarded Green s Function for Electrons; Excitons; Polaritons; Semiconductor Bloch Equations; Excitonic Optical Stark Effect; Wave-Mixing Spectroscopy; Optical Properties of a Quasi-Equilibrium Electron Hole Plasma; Optical Bistability; Semiconductor Laser; Electroabsorption; Magneto-Optics; Quantum Dots; Coulomb Quantum Kinetics; Quantum Optical Effects. 23 cm. Date : 2009 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Quasi-hydrodynamic semiconductor equations / par JŁungel,, Ansgar, Publication : Basel ; | Boston : BirkhŁauser Verlag, 2001 . x, 293 p. : 24 cm. Date : 2001 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

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