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The K P method : electronic properties of semiconductors par Voon,, Lok C. Lew Yan. Publication : [S.l.] Springer 2009 . 445 p. , This book presents a detailed exposition of the formalism and application of k.p theory for both bulk and nanostructured semiconductors. For bulk crystals, this is the first time all the major techniques for deriving the most popular Hamiltonians have been provided in one place. For nanostructures, this is the first time the Burt-Foreman theory has been made accessible. Thus, the reader will gain a clear understanding of the k.p method, will have an explicit listing of the various Hamiltonians in a consistent notation for their use, and a set of representative results. In addition, the reader can derive an excellent understanding of the electronic structure of semiconductors. 24 cm. Date : 2009 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

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Theory of defects in solids Electronic structure of defects in insulators and semiconductors par Stoneham, A. M. Publication : Oxford | New York Clarendon Press | Oxford University Press 2007 . 2 volumes (xix, 955 pages) 24 cm. Date : 2007 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1), La bibliothèque des Sciences Exactes et Naturelles (1),

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Thin films material technology : sputtering of compound materials / par Wasa, Kiyotaka. Publication : [S.l.] : Springer, 2004 . 518 p. ; , An invaluable resource for industrial science and engineering newcomers to sputter deposition technology in thin film production applications, this book is rich in coverage of both historical developments and the newest experimental and technological information about ceramic thin film, a key technology for nano-materials in high-speed information applications and large-area functional coating such as automotive or decorative painting of plastic parts. Key topics: Principles and examples of making thin-film materials and devices such as nanometer composite thin films, nanometer superlattice of compound ceramics, micro-sensors and actuators, micro-MEMS, mobile compact/flexible ferroelectric memory, flat display including plasma display and PLD, and thin film catalysis, solar battery, and large-area functional window glass coating for energy and environmental uses; Covers techniques in automotive parts coatings :non-peel plastics coatings with metal, alloy, and compound films. 24 cm. Date : 2004 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),

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Transparent electronics : from synthesis to applications   Publication : [S.l.] Wiley 2010 . 470 p. , The challenge for producing “invisible” electronic circuitry and opto-electronic devices is that the transistor materials must be transparent to visible light yet have good carrier mobilities. This requires a special class of materials having “contra-indicated properties” because from the band structure point of view, the combination of transparency and conductivity is contradictory. Structured to strike a balance between introductory and advanced topics, this monograph juxtaposes fundamental science and technology / application issues, and essential materials characteristics versus device architecture and practical applications. The first section is devoted to fundamental materials compositions and their properties, including transparent conducting oxides, transparent oxide semiconductors, p-type wide-band-gap semiconductors, and single-wall carbon nanotubes. The second section deals with transparent electronic devices including thin-film transistors, photovoltaic cells, integrated electronic circuits, displays, sensors, solar cells, and electro-optic devices. Describing scientific fundamentals and recent breakthroughs such as the first “invisible” transistor, Transparent Electronics: From Synthesis to Applications brings together world renowned experts from both academia, national laboratories, and industry. 25 cm. Date : 2010 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),

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Transport equations for semiconductors par JUngel, Ansga Publication : [S.l.] Springer 2009 . 332 p. , Semiconductor devices are ubiquitous in the modern computer and telecommunications industry. A precise knowledge of the transport equations for electron flow in semiconductors when a voltage is applied is therefore of paramount importance for further technological breakthroughs. In the present work, the author tackles their derivation in a systematic and rigorous way, depending on certain key parameters such as the number of free electrons in the device, the mean free path of the carriers, the device dimensions and the ambient temperature. Accordingly a hierarchy of models is examined which is reflected in the structure of the book: first the microscopic and macroscopic semi-classical approaches followed by their quantum-mechanical counterparts. 25 cm. Date : 2009 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

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X-ray metrology in semiconductor manufacturing par Bowen, D. Keith Publication : Boca Raton CRC/Taylor and Francis 2006 . 279 pages 25 cm. Date : 2006 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),

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Long wave polar modes in semiconductor heterostructures / par Trallero-Giner, C. Publication : Oxford ; | New York, NY : Pergamon, 1998 . 1 online resource (xiii, 164 pages) : Date : 1998 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

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Quantum efficiency in complex systems. Pt. 1, Biomolecular systems / par Weber, Eicke R. Publication : . 1 online resource (x, 123 pages, [4] pages of plates) : Disponibilité :  http://www.sciencedirect.com/science/book/9780123750426,

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