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˜The œphysics of semiconductors : an introduction including devices and nanophysics / par Grundmann, Marius. Publication : Berlin ; | New York : Springer, 2006 . xxx, 689 p. : , "With 587 figures, 6 in color, and 36 tables"--T.p. 24 cm. Date : 2006 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Einstein relation in compound semiconductors and their nanostructures par Ghatak, Kamakhya Prasad. Publication : [S.l.] Springer 2009 . 457 p. , This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems. 24 cm. Date : 2009 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),

The K P method : electronic properties of semiconductors par Voon,, Lok C. Lew Yan. Publication : [S.l.] Springer 2009 . 445 p. , This book presents a detailed exposition of the formalism and application of k.p theory for both bulk and nanostructured semiconductors. For bulk crystals, this is the first time all the major techniques for deriving the most popular Hamiltonians have been provided in one place. For nanostructures, this is the first time the Burt-Foreman theory has been made accessible. Thus, the reader will gain a clear understanding of the k.p method, will have an explicit listing of the various Hamiltonians in a consistent notation for their use, and a set of representative results. In addition, the reader can derive an excellent understanding of the electronic structure of semiconductors. 24 cm. Date : 2009 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Solid-State Electronic Devices An Introduction / par Papadopoulos, Christo. Publication : . XIII, 277 p. 151 illus., 45 illus. in color. Disponibilité :  http://dx.doi.org/10.1007/978-1-4614-8836-1,

Low Threshold Organic Semiconductor Lasers Hybrid Optoelectronics and Applications as Explosive Sensors / par Wang, Yue. Publication : . XVI, 164 p. 137 illus., 73 illus. in color. Disponibilité :  http://dx.doi.org/10.1007/978-3-319-01267-4,

Debye Screening Length Effects of Nanostructured Materials / par Ghatak, Kamakhya Prasad. Publication : . XXXIII, 385 p. 123 illus. Disponibilité :  http://dx.doi.org/10.1007/978-3-319-01339-8,

Self-Organized Quantum Dots for Memories Electronic Properties and Carrier Dynamics / par Nowozin, Tobias. Publication : . XVI, 153 p. 91 illus., 9 illus. in color. Disponibilité :  http://dx.doi.org/10.1007/978-3-319-01970-3,

Solar Cells Based on Colloidal Nanocrystals par Borchert, Holger. Publication : . XII, 236 p. 108 illus., 27 illus. in color. Disponibilité :  http://dx.doi.org/10.1007/978-3-319-04388-3,

Aligned Carbon Nanotubes Physics, Concepts, Fabrication and Devices / par Ren, Zhifeng. Publication : . XVI, 300 p. Disponibilité :  http://dx.doi.org/10.1007/978-3-642-30490-3,

Nucleation Theory and Growth of Nanostructures par Dubrovskii, Vladimir G. Publication : . XIII, 601 p. 358 illus., 126 illus. in color. Disponibilité :  http://dx.doi.org/10.1007/978-3-642-39660-1,

Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System par Samukawa, Seiji. Publication : . VIII, 40 p. 35 illus., 30 illus. in color. Disponibilité :  http://dx.doi.org/10.1007/978-4-431-54795-2,

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