IMIST


Affiner votre recherche

Votre recherche a retourné 60 résultats.

Basic semiconductor physics par Hamaguchi, Chihiro. Publication : [S.l.] Springer 2010 . 585 p. , This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mobility. Recent progress in quantum structures such as two-dimensional electron gas, superlattices, quantum Hall effect, electron confinement and the Landauer formula are included. The Quantum Hall effect is presented with different models. In the second edition, the addition energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. Also the physics of semiconductor Lasers is described in detail including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue Lasers, optical confinement, laser modes, strained quantum wells lasers which will give insight into the physics of various kinds of semiconductor lasers, in addition to the various processes of luminescence. 24 cm. Date : 2010 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Einstein relation in compound semiconductors and their nanostructures par Ghatak, Kamakhya Prasad. Publication : [S.l.] Springer 2009 . 457 p. , This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems. 24 cm. Date : 2009 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),

Electronic quantum transport in mesoscopic semiconductor structures / par Ihn, Thomas. Publication : New York : Springer, 2004 . xi, 270 p. : 25 cm. Date : 2004 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1), La bibliothèque des Sciences Exactes et Naturelles (1),

Physics of semiconductors / par Sapoval,, B. Publication : [S.l.] : Springer, 2003 . 319 p. ; , Based on courses given at the Ecole Polytechnique in France, this book covers not only the fundamental physics of semiconductors, but also discusses the operation of electronic and optical devices based on semiconductors. It is aimed at students with a good background in mathematics and physics, and is equally suited for graduate-level courses in condensed-matter physics as for self-study by engineers interested in a basic understanding of semiconductor devices. 24 cm. Date : 2003 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),

Semiconductor quantum optics / par Kira, Mackillo, Publication : Cambridge ; | New York : Cambridge University Press, 2012 . xiii, 643 pages : 26 cm Date : 2012 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),

Semiconductor surfaces and interfaces / par Mƴnch,, Winfried. Publication : [S.l.] : Springer, 2001 . 500 p. ; , Text dealing with the structural and electronic properties of semiconductor surfaces and interfaces, completely updated and revised from the previous edition. Includes an extensive discussion of the band lineup and semiconductor interfaces, with the continuum of interface-induced gap states as the unifying concept. Previous edition not cited. 25 cm. Date : 2001 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

The K P method : electronic properties of semiconductors par Voon,, Lok C. Lew Yan. Publication : [S.l.] Springer 2009 . 445 p. , This book presents a detailed exposition of the formalism and application of k.p theory for both bulk and nanostructured semiconductors. For bulk crystals, this is the first time all the major techniques for deriving the most popular Hamiltonians have been provided in one place. For nanostructures, this is the first time the Burt-Foreman theory has been made accessible. Thus, the reader will gain a clear understanding of the k.p method, will have an explicit listing of the various Hamiltonians in a consistent notation for their use, and a set of representative results. In addition, the reader can derive an excellent understanding of the electronic structure of semiconductors. 24 cm. Date : 2009 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Transport equations for semiconductors par JUngel, Ansga Publication : [S.l.] Springer 2009 . 332 p. , Semiconductor devices are ubiquitous in the modern computer and telecommunications industry. A precise knowledge of the transport equations for electron flow in semiconductors when a voltage is applied is therefore of paramount importance for further technological breakthroughs. In the present work, the author tackles their derivation in a systematic and rigorous way, depending on certain key parameters such as the number of free electrons in the device, the mean free path of the carriers, the device dimensions and the ambient temperature. Accordingly a hierarchy of models is examined which is reflected in the structure of the book: first the microscopic and macroscopic semi-classical approaches followed by their quantum-mechanical counterparts. 25 cm. Date : 2009 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Long wave polar modes in semiconductor heterostructures / par Trallero-Giner, C. Publication : Oxford ; | New York, NY : Pergamon, 1998 . 1 online resource (xiii, 164 pages) : Date : 1998 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Long wave polar modes in semiconductor heterostructures / par Trallero-Giner, C. Publication : . 1 online resource (xiii, 164 pages) : Disponibilité :  http://www.sciencedirect.com/science/book/9780080426945,

Quantum dots : a survey of the properties of artificial atoms / par Chakraborty, T. Publication : . 1 online resource (xiv, 348 pages) : Disponibilité :  http://www.sciencedirect.com/science/book/9780444502582,

Vous ne trouvez pas ce que vous cherchez ?
© Tous droits résérvés IMIST/CNRST
Angle Av. Allal Al Fassi et Av. des FAR, Hay Ryad, BP 8027, 10102 Rabat, Maroc
Tél:(+212) 05 37.56.98.00
CNRST / IMIST

Propulsé par Koha