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˜The œphysics of semiconductors : an introduction including devices and nanophysics / par Grundmann, Marius. Publication : Berlin ; | New York : Springer, 2006 . xxx, 689 p. : , "With 587 figures, 6 in color, and 36 tables"--T.p. 24 cm. Date : 2006 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Basic semiconductor physics par Hamaguchi, Chihiro. Publication : [S.l.] Springer 2010 . 585 p. , This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mobility. Recent progress in quantum structures such as two-dimensional electron gas, superlattices, quantum Hall effect, electron confinement and the Landauer formula are included. The Quantum Hall effect is presented with different models. In the second edition, the addition energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. Also the physics of semiconductor Lasers is described in detail including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue Lasers, optical confinement, laser modes, strained quantum wells lasers which will give insight into the physics of various kinds of semiconductor lasers, in addition to the various processes of luminescence. 24 cm. Date : 2010 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Einstein relation in compound semiconductors and their nanostructures par Ghatak, Kamakhya Prasad. Publication : [S.l.] Springer 2009 . 457 p. , This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems. 24 cm. Date : 2009 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),

Electrical engineering materials par Karki,, Nava Raj. Publication : [S.l.] Alpha Science Int'l Ltd 2007 . 250 p. , "Electrical Engineering Materials" covers the area of quantum mechanics that leads to the understanding of electrical behaviour of materials. The classification of material is based on energy band structure. This book clarifies that the conductivity of material is determined by mobile charge carrier concentration and drift mobility and the reasons for higher conductivity in metals and lower conductivity in semiconductors. The book also covers dielectric materials: polarization mechanism, temperature and frequency dependence, piezoelectricity and ferroelectricity. Starting from the elementary concepts associated with magnetism and latest developments in magnetic materials, it explains the concept of semiconducting material, their characteristics and formation of p- and n-type semiconductors. Similarly, the behaviour of pn junction under different bais voltages are described as also the principle of semiconductor material fabrication, purification of Si, doping mechanisms, the device fabrication along with different aspects associated with superconductivity, types of superconducting materials with update on latest development in the field of superconductivity. 25 cm. Date : 2007 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),

Electro-optical effects to visualize field and current distributions in semiconductors par Böer,, K. W. Publication : Heidelberg Springer 2010 . viii, 125 pages 24 cm. Date : 2010 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Electron transport phenomena in semiconductors / par Askerov,, B. M. Publication : Singapore ; | River Edge, NJ : World Scientific, 1994 . xiv, 394 p. : , Translation of: çElektronnye ëiÞavlenëiÞa perenosa v poluprovodnikakh. 23 cm. Date : 1994 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Electronic and optoelectronic properties of semiconductor structures par Singh,, Jasprit. Publication : [S.l.] Cambridge University Press 2007 . 560 p. , Jasprit Singh presents the underlying physics behind devices that drive today's technologies, utilizing carefully chosen solved examples to convey important concepts. Real-world applications are highlighted throughout the book, stressing the links between physical principles and actual devices. The volume provides engineering and physics students and professionals with complete coverage of key modern semiconductor concepts. A solutions manual and set of viewgraphs for use in lectures is available for instructors, from solutions@cambridge.org. 24 cm. Date : 2007 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Electronic quantum transport in mesoscopic semiconductor structures / par Ihn, Thomas. Publication : New York : Springer, 2004 . xi, 270 p. : 25 cm. Date : 2004 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1), La bibliothèque des Sciences Exactes et Naturelles (1),

Electrons and phonons in semiconductor multilayers par Ridley, B. K. Publication : Cambridge, UK | New York Cambridge University Press 2009 . xii, 409 pages 26 cm. Date : 2009 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Excitons in low-dimensional semiconductors : theory, numerical methods, applications / par Glutsch,, Stephan, Publication : Berlin ; | New York : Springer, 2004 . xi, 294 p. : 24 cm. Date : 2004 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

Fundamentals of semiconductor manufacturing and process control par May, Gary S. Publication : [S.l.] Wiley-IEEE Press 2006 . 463 p. , A practical guide to semiconductor manufacturing from process control to yield modeling and experimental design Fundamentals of Semiconductor Manufacturing and Process Control covers all issues involved in manufacturing microelectronic devices and circuits, including fabrication sequences, process control, experimental design, process modeling, yield modeling, and CIM/CAM systems. Readers are introduced to both the theory and practice of all basic manufacturing concepts. Following an overview of manufacturing and technology, the text explores process monitoring methods, including those that focus on product wafers and those that focus on the equipment used to produce wafers. Next, the text sets forth some fundamentals of statistics and yield modeling, which set the foundation for a detailed discussion of how statistical process control is used to analyze quality and improve yields. The discussion of statistical experimental design offers readers a powerful approach for systematically varying controllable process conditions and determining their impact on output parameters that measure quality. The authors introduce process modeling concepts, including several advanced process control topics such as run-by-run, supervisory control, and process and equipment diagnosis. Critical coverage includes the following: * Combines process control and semiconductor manufacturing * Unique treatment of system and software technology and management of overall manufacturing systems * Chapters include case studies, sample problems, and suggested exercises * Instructor support includes electronic copies of the figures and an instructor's manual Graduate-level students and industrial practitioners will benefit from the detailed exami?nation of how electronic materials and supplies are converted into finished integrated circuits and electronic products in a high-volume manufacturing environment. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department. An Instructor Support FTP site is also available. 24 cm. Date : 2006 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),

Handbook of semiconductor manufacturing technology   Publication : Boca Raton CRC Press 2008 . 1 v. (various pagings) , Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on… Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand. 26 cm. Date : 2008 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),
Heteroepitaxy of semiconductors theory, growth, and characterization par Ayers, John E. Publication : [S.l.] CRC Press 2007 . 480 p. , Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field. 24 cm. Date : 2007 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

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