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History of semiconductor engineering / par Lojek, Bo. Publication : New York : Springer, 2006 . xi, 387 p. : 25 cm. Date : 2006 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),

Integrated silicon optoelectronics par Zimmermann, Horst Publication : Berlin | Heidelberg Springer 2010 . xix, 385 pages , Previous edition: 2000 24 cm. Date : 2010 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),

Intense terahertz excitation of semiconductors par Ganichev, S. D. Publication : Oxford | New York Oxford University Press 2006 . xi, 418 pages 24 cm. Date : 2006 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),

Microelectronic circuit design par Jaeger, Richard C. Publication : New York Mcgraw Hill 2011 . XXVI, 1334 p. , Richard Jaeger and Travis Blalock present a balanced coverage of analog and digital circuits; students will develop a comprehensive understanding of the basic techniques of modern electronic circuit design, analog and digital, discrete and integrated. A broad spectrum of topics are included in "Microelectronic Circuit Design" which gives the professor the option to easily select and customize the material to satisfy a two-semester or three-quarter sequence in electronics. Jaeger/Blalock emphasizes design through the use of design examples and design notes. Excellent pedagogical elements include chapter opening vignettes, chapter objectives, 'Electronics in Action' boxes, a problem-solving methodology, and 'Design Note' boxes. The use of the well-defined problem-solving methodology presented in this text can significantly enhance an engineer's ability to understand the issues related to design. The design examples assist in building and understanding the design process. 26 cm. Date : 2011 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),

Modern physics for semiconductor science / par Coleman,, Charles C. Publication : Weinheim : | [Chichester : Wiley-VCH ; | John Wiley, distributor] 2008 . xi, 320 pages : , "Physics textbooks."--Cover. | Includes index. 25 cm. Date : 2008 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),

Non-equilibrium dynamics of semiconductors and nanostructures   Publication : [S.l.] CRC Press 2005 . 272 p. , The advent of the femto-second laser has enabled us to observe phenomena at the atomic timescale. One area to reap enormous benefits from this ability is ultrafast dynamics. Collecting the works of leading experts from around the globe, Non-Equilibrium Dynamics of Semiconductors and Nanostructures surveys recent developments in a variety of areas in ultrafast dynamics. In eight authoritative chapters illustrated by more than 150 figures, this book spans a broad range of new techniques and advances. It begins with a review of spin dynamics in a high-mobility two-dimensional electron gas, followed by the generation, propagation, and nonlinear properties of high-amplitude, ultrashort strain solitons in solids. The discussion then turns to nonlinear optical properties of nanoscale artificial dielectrics, optical properties of GaN self-assembled quantum dots, and optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based semiconductors. Rounding out the presentation, the book examines ultrafast non-equilibrium electron dynamics in metal nanoparticles, monochromatic acoustic phonons in GaAs, and electromagnetically induced transparency in semiconductor quantum wells. With its pedagogical approach and practical, up-to-date coverage, Non-Equilibrium Dynamics of Semiconductors and Nanostructures allows you to easily put the material into practice, whether you are a seasoned researcher or new to the field. 24 cm. Date : 2005 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),
Optical absorption of impurities and defects in semiconducting crystals par Pajot, Bernard Publication : Heidelberg [u.a.] Springer 2010 . XIX, 470 S. 235 x 155 mm Date : 2010 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1),

Physics of semiconductor devices par Sze , Simon M. Publication : [S.l.] Wiley-Interscience 2007 . 832 p. , The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial departmen 24 cm. Date : 2007 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1),

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