Catalogue Bibliothèque de L'IMIST/CNRST › Résultats de la recherche pour 'su:Compound semiconductors'

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		Einstein relation in compound semiconductors and their nanostructures par Ghatak, Kamakhya Prasad. Publication : [S.l.] Springer 2009 . 457 p. , This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems. 24 cm. Date : 2009 Disponibilité : Exemplaires disponibles: La bibliothèque des sciences de l'ingénieur (1), Réserver Ajouter au panier (Supprimer)
		Group iii nitride semiconductor compounds : physics and applications. Publication : [S.l.] : Oxford University Press, USA, 1998 . 492 p. ; , Nitride semiconductors have tremendous potential, particularly in visible and ultraviolent optoelectronics. This book describes the physics of nitride-based materials and related devices. Its goal is to provide graduate students and young researchers with a rapid introduction to this burgeoning field. It contains tutorial-style chapters commissioned from some of the very best experts from academia and industry. The book addresses all aspects arising from the dual challenges of achieving high-quality, single crystal material and engineering optoelectronic devices. In the first chapters, the reader will learn about the nitrides in the context of other semiconductors and will be exposed to the methods used to grow these materials. The following chapters then discuss the materials' performance from the point of view of electronic transport, optical, and structural properties. The volume concludes with an extensive review of device applications in modern transistors, ultraviolet detectors, and light emitters. 24 cm. Date : 1998 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1), Réserver Ajouter au panier (Supprimer)
		Heteroepitaxy of semiconductors theory, growth, and characterization par Ayers, John E. Publication : [S.l.] CRC Press 2007 . 480 p. , Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field. 24 cm. Date : 2007 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1), Réserver Ajouter au panier (Supprimer)
		Rare earth doped III-nitrides for optoelectronic and spintronic applications / Publication : Dordrecht, the Netherlands ; \| New York : \| Bristol, UK : Springer ; \| in association with Canopus Academic Pub., 2010 . xvi, 355 pages : 24 cm. Date : 2010 Disponibilité : Exemplaires disponibles: La bibliothèque des Sciences Exactes et Naturelles (1), Réserver Ajouter au panier (Supprimer)
		Organometallic vapor-phase epitaxy : theory and practice / par Stringfellow, G. B. Publication : . 1 online resource (xxiv, 572 pages) : Disponibilité : http://www.sciencedirect.com/science/book/9780126738421, Ajouter au panier (Supprimer)
		Handbook of compound semiconductors : growth, processing, characterization, and devices / Publication : . 1 online resource (xxii, 914 pages) : Disponibilité : http://www.sciencedirect.com/science/book/9780815513742, Ajouter au panier (Supprimer)
		Wide bandgap semiconductors : growth, processing and applications / Publication : . 1 online resource (xx, 571 pages) : Disponibilité : http://www.sciencedirect.com/science/book/9780815514398, Ajouter au panier (Supprimer)