Bibliothèque de L'IMIST/CNRST

Regular vs Irregular TSV Placementfor 3D IC -- Steiner Routingfor 3D IC -- Buffer Insertion for 3D IC.-  Low Power Clock Routing for 3D IC -- Power Delivery Network Design for 3D IC -- 3D Clock Routing for Pre-bond Testability -- TSV-to-TSV Coupling Analysis and Optimization -- TSV Current Crowding and Power Integrity -- Modeling of Atomic Concentration at the Wire-to-TSV Interface -- Multi-Objective Archetectural Floorplanning for 3D IC -- Thermal-aware Gate-level Placement for 3D IC -- 3D IC Cooling with Micro-Fluidic Channels -- Mechanical Reliability Analysis and Optimization for 3D IC -- Impact of Mechanical Stress on Timing Variation for 3D IC -- Chip/Package Co-Analysis of Mechanical Stress for 3D IC -- 3D Chip/Packaging Co-Analysis of Stress-Induced Timing Variations -- TSV Interfracial Crack Analysis and Optimization -- Ultra High Logic Designs Using Monolithic 3D Integration -- Impact of TSV Scaling on 3D IC Design Quality -- 3D-MAPS: 3DMassively Parallel Processor with Stacked Memory.

This book describes the design of through-silicon-via (TSV) based three-dimensional integrated circuits.  It includes details of numerous “manufacturing-ready” GDSII-level layouts of TSV-based 3D ICs, developed with tools covered in the book. Readers will benefit from the sign-off level analysis of timing, power, signal integrity, and thermo-mechanical reliability for 3D IC designs.  Coverage also includes various design-for-manufacturability (DFM), design-for-reliability (DFR), and design-for-testability (DFT) techniques that are considered critical to the 3D IC design process. Describes design issues and solutions for high performance and low power 3D ICs, such as the pros/cons of regular and irregular placement of TSVs, Steiner routing, buffer insertion, low power 3D clock routing, power delivery network design and clock design for pre-bond testability. Discusses topics in design-for-electrical-reliability for 3D ICs, such as TSV-to-TSV coupling, current crowding at the wire-to-TSV junction and the electro-migration failure mechanisms in TSVs. Covers design-for-thermal-reliability in 3D ICs, including thermal-aware architectural floorplanning, gate-level placement techniques to alleviate thermal problems, and co-design and co-analysis of thermal, power delivery, and performance. Includes issues affecting design-for-mechanical-reliability in 3D ICs, such as the co-efficient of thermal expansion (CTE) mismatch between TSV and silicon substrate, device mobility and full-chip timing variations, and the impact of package elements.